Micron 1γ DRAM Node-Based DDR5 Memory
Micron 1γ DRAM Node-Based DDR5 Memory is a 1γ (1-gamma), sixth-generation (10nm-class) DRAM node-based DDR5 memory designed for next-generation CPUs. This component delivers superior performance and power efficiency by building on Micron’s previous 1α (1-alpha) and 1β (1-beta) DRAM nodes. The 1γ DRAM improves performance to support the scaling of compute across a range of memory offerings, meeting the demands of future AI workload requirements. The module also offers power savings with next-generation high-K metal gate CMOS technology and design optimizations. This combination offers greater than 20% lower power, which improves thermal profiles. Micron 1γ DRAM Node-Based DDR5 Memory also provides >30% more bits-per-wafer output than the previous generation. Suitable applications include mobile, data centers, automotive, edge AI, and AI PCs.Features
- Enhanced performance
- Supports scaling of compute across variety of memory offerings
- Meets demands of future AI workload requirements
- Power savings
- Next-generation high-K metal gate CMOS technology
- Design optimizations
- >20% lower power for improved thermal profiles
- Improved bit-density output
- Leverages EUV lithography, design optimizations, and process innovations
- >30% more bits-per-wafer output over previous generation
- Ability to scale memory supply efficiently
Applications
- Data centers
- Edge AI
- AI PCs
- Mobile
- Automotive
Advanced Technology
Infographic
Additional Resources
Opublikowano: 2025-03-13
| Zaktualizowano: 2025-03-14
