Microchip Technology Silicon Carbide (SiC) Semiconductors
Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.
Features
- Extremely low switching losses
- Zero reverse recovery charge improves system efficiency
- High power density in smaller footprint reduces system size and weight
- 2.5x more thermally conductive than silicon
- Reduced sink requirements for lower cost and smaller size
- High-temperature operation offers increased power density and improved reliability
Applications
- Defense
- Industrial
- Medical
- Photovoltaic solutions
- Powertrain and EV charging
- Radar electronic warfare
- Radar-EW RF front-ends
- Space
Videos
Featured SiC Products
Microchip Technology Silicon Carbide (SiC) MOSFETs
Offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs.
Microchip Technology Silicon Carbide (SiC) Power Modules
Optimized for reliability, efficiency, low cost, space-saving, and reduced assembly time.
Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes
Zero forward and reverse recovery charge for improved system efficiency.
Opublikowano: 2020-01-21
| Zaktualizowano: 2024-09-17