Microchip Technology Silicon Carbide (SiC) Power Modules
Microchip Technology Silicon Carbide (SiC) Power Modules combine a formidable array of technologies into a single package optimized for reliability, efficiency, space-saving, and reduced assembly time. The readily available standard module product line from Microchip Technology spans a wide selection of circuit topologies, semiconductors including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with application-specific power modules (ASPM®).
Features
- -60°C to +200°C temperature range
- High reliability
- Reduced size and weight
- High-reliability testing and screening options
Applications
- Welding
- Solar
- Induction heating
- Medical
- UPS
- Motor control
- Switched-mode power supplies
- Defense and aerospace
Resources
- 48kW Resonant Converter for X-ray Machines Uses High-Speed Power Modules with Integral Liquid Cooling
- Advanced IGBT Driver Application Manual
- Baseplate Flatness of Power Modules
- Handling Instructions and Protection against Electrostatic Discharges
- High-Frequency Resonant Half Bridge
- Mounting Instructions for D3 and D4 Power Modules
- Mounting Instructions for SP1 Power Modules
- Mounting Instructions for Phase Leg and Full Bridge SP2 Power Modules
- Mounting Instructions for SP3 Power Modules
- Mounting Instructions for SP3F Power Modules
- Mounting Instructions for SP4 Power Modules
- Mounting Instructions for SP6 Power Modules
- Mounting Instructions for SP6 Low Inductance Power Module
- Mounting Instruction for SP6P Power Module
- Parallel Connection of IGBT and MOSFET Power Modules
- Turn-Off Snubber Design for High-Frequency Modules
- Using NTC Temperature Sensors Integrated into Power Modules
Related Products
Microchip Technology Silicon Carbide (SiC) Semiconductors
Offers a small footprint, high thermal conductivity, and zero reverse recovery charge.
Microchip Technology Silicon Carbide (SiC) MOSFETs
Offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs.
Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes
Zero forward and reverse recovery charge for improved system efficiency.
Opublikowano: 2020-01-29
| Zaktualizowano: 2024-07-08