IXYS IXFH34N65X2W Power MOSFET
IXYS IXFH34N65X2W Power MOSFET is a 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET developed using the charge compensation principle and proprietary process technology. This N-channel power MOSFET exhibits low on-state resistance and low gate charges, along with superior dv/dt performance. The IXFH34N65X2W MOSFET features high power density, and the avalanche capability enhances the device's ruggedness. In addition to the fast soft-recovery body diode, the ultra-junction MOSFET helps to reduce switching losses and Electro-Magnetic Interference (EMI). The IXFH34N65X2W MOSFET is used in switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, robotics, and servo control applications.
Features
- 650V drain-source voltage (VDS)
- ≤100mΩ low on-resistance (RDS(on))
- 64nC low gate charge (Qg)
- 540W power dissipation (PD)
- 34A drain current (ID)
- Avalanche rated
- High efficiency
- -55°C to 150°C storage temperature range
- High power density
- Low package inductance
- Reduced conduction losses
- Reduced driver power requirements
- International standard package
- Easy to mount
- Space savings
Applications
- Switch-mode and resonant-mode power supplies
- DC-DC converters
- AC and DC motor drives
- PFC circuits
- Robotics
- Servo controls
Dimensions Drawing
Related MOSFETs
IXYS Tranzystor mocy MOSFET IXFH46N65X2W
650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS Tranzystor mocy MOSFET IXFP34N65X2W
650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
Opublikowano: 2025-02-21
| Zaktualizowano: 2025-03-17