InterFET IF360x N-Channel JFETs
InterFET IF360x JFETs are targeted for ultra-low noise and high gain differential amplifier designs. These JFETs offer 2Ω low resistance Rds(on). The IF360x JFETs feature a cutoff voltage of less than 2V and are ideal for low-voltage applications. These JFETs are RoHS Compliant. The IF3601 JFET comes in a TO-39 package, and the IF3602 JFET comes in a TO-78 package. These JFETS are suitable for low-noise and high-gain amplifiers.
Features
- -20V reverse gate-source and reverse gate-drain voltage
- 10mA continuous forward gate current
- 300mW continuous device power dissipation
- Power derating:
- 2mW/°C (IF3601)
- 4mW/°C (IF3602)
- -65°C to 200°C storage temperature range
- -0.1nA maximum gate reverse current (VGS = -10V, VDS = 0V)
- -2V max. gate-source cutoff voltage (VDS = 10V, ID = 0.5nA)
- 30mA minimum drain saturation current (VGS = 0V, VDS = 10V (pulsed) )
Applications
- Low-noise, high gain amplifiers
- Military
- Low voltage applications
TO-39 Bottom View
TO-78 Bottom View
Opublikowano: 2014-07-09
| Zaktualizowano: 2024-12-12