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Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.

Features

  • N/P-MOSFET in H-Bridge
  • Low profile, space-saving SO-8 package
  • Low on-state resistance
  • Fast switching times
  • Low gate charge
  • UL 94V-0 case material
  • Moisture Sensitivity Level (MSL) 3
  • Lead-free and RoHS compliant

Applications

  • DC/DC converters
  • Power supplies
  • DC drives
  • Synchronous rectifiers
  • Commercial/Industrial grade

Specifications

  • ±20V maximum continuous gate-source voltage
  • 1.5W maximum power dissipation
  • -55°C to +150°C junction temperature range
  • <83K/W junction-to-ambient thermal resistance
  • N-Channel
    • Static
      • 30V minimum drain-source breakdown voltage
      • 0.5µA maximum drain-source leakage current
      • ±1000nA maximum gate-body leakage current
      • 1V to 2V gate-source threshold voltage
      • 19mΩ to 26mΩ typical drain-source on-state resistance range, 25mΩ to 40mΩ maximum range
    • Dynamic
      • 4S typical forward transconductance
      • 590pF typical input capacitance
      • 122pF typical output capacitance
      • 58pF typical reverse transfer capacitance
      • 11.2ns to 15ns typical turn-off delay/rise time range
      • 8.7ns to 17.5ns typical turn-off delay/fall time range
      • 11.7nC typical total gate charge
      • 1.8nC typical gate-source charge
      • 2.1nC typical gate-drain charge
  • P-Channel
    • Static
      • 30V minimum drain-source breakdown voltage
      • 0.5µA maximum drain-source leakage current
      • ±1000nA maximum gate-body leakage current
      • 1V to 2V gate-source threshold voltage
      • 43mΩ to 68mΩ typical drain-source on-state resistance range, 50mΩ to 80mΩ maximum range
    • Dynamic
      • 3.5S typical forward transconductance
      • 631pF typical input capacitance
      • 137pF typical output capacitance
      • 70pF typical reverse transfer capacitance
      • 4.9ns to 7.5ns typical turn-off delay/rise time range
      • 13.5ns to 28.2ns typical turn-off delay/fall time range
      • 11.4nC typical total gate charge
      • 1.8nC typical gate-source charge
      • 2.1nC typical gate-drain charge
  • Diode
    • ±1.2V maximum forward voltage
    • 15.1ns to 18.3ns typical reverse recovery time range
    • 12nC to 15.3nC reverse recovery charge

Additional Resources

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Opublikowano: 2023-02-17 | Zaktualizowano: 2023-02-24