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Diodes Incorporated ZXTP56020FDBQ Bipolar Transistor

Diodes Inc. ZXTP56020FDBQ Bipolar Transistor is a 20V dual PNP configuration Bipolar Junction Transistor (BJT) in a compact and low profile U-DFN2020-6 SWP package. This BJT is qualified to AEC-Q101 standards for high reliability. The ZXTP56020FDBQ transistor features -20V collector to emitter breakdown voltage (BVCEO) and -2A high continuous collector current. This bipolar transistor offers power dissipation up to 2.47W for power-demanding applications. The ZXTP56020FDBQ BJT operates within -55°C to 150°C temperature range and provides less than -150mV low saturation voltage @ -1A. Typical applications include matrix LED lighting and power management.

Features

  • Up to -20V BVCEO 
  • -2A high continuous collector current (IC)
  • 100mΩ for a low equivalent on-resistance (RCE(SAT))
  • Less than -150mV @ -1A low saturation voltage VCE(SAT) 
  • Tin plated sidewall for wettable flanks in AOI
  • Up to 2.47W power dissipation for power-demanding applications
  • Low-profile 0.6mm high package for thin applications
  • Lead-free and fully RoHS compliant 
  • Halogen and antimony-free “Green” device 

Applications

  • Matrix LED lighting
  • Power management

Mechanical Dimensions

Diodes Incorporated ZXTP56020FDBQ Bipolar Transistor
Opublikowano: 2018-06-01 | Zaktualizowano: 2022-09-28