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Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET

Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET is designed to minimize the on-state resistance (RDS(ON)). The MOSFET offers superior switching performance, making it ideal for high-efficiency power management applications. The Diodes Inc. DMN2992UFA MOSFET is available in an X2-DFN0806-3 package with a low profile and a height of 0.04mm.

Features

  • Low package profile, 0.4mm maximum package height
  • 0.48mm2 package footprint, 16 times smaller than SOT23
  • Low on-resistance
  • Very low gate threshold voltage, 1.0V max
  • ESD-protected gate
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony-free “Green” device
  • For automotive applications requiring specific change control

Applications

  • General-purpose interfacing switches
  • Power-management functions
  • Analog switches

Specifications

  • X2-DFN0806-3 package
  • Molded plastic, “Green” molding compound package material
  • UL flammability classification rating 94V-0
  • Moisture sensitivity level 1 per J-STD-020
  • Finish – NiPdAu over copper leadframe terminals
  • Solderable per MIL-STD-202, Method 208
  • 0.001 grams weight (approximate)

Application Circuit

Application Circuit Diagram - Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET
Opublikowano: 2025-10-16 | Zaktualizowano: 2025-11-04