Broadcom AFBR-S4N44P044M 2×2 NUV-MT Photomultiplier Array
Broadcom AFBR-S4N44P044M 2×2 NUV-MT Silicon Photomultiplier Array is ideally designed for ultra-sensitive precision measurements of single photons. The SiPM utilizes NUV-MT technology, which incorporates improved photo-detection efficiency (PDE) with reduced dark count rate and crosstalk compared to the NUV-HD technology. The AFBR-S4N44P044M features a 4mm pitch in both directions. Tiling multiple AFBR-S4N44P044M arrays can cover larger areas with a pitch of 8.3mm without any edge losses.
The Broadcom AFBR-S4N44P044M array encapsulates an epoxy clear mold compound for excellent mechanical stability and robustness. The epoxy is highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity toward the blue and near UV region.
The device is well suited for detecting low-level pulsed light sources, especially Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, or LaBr3).
Features
- 2×2 SiPM array
- Array size of 8.26mm × 8.26mm
- High PDE (63% at 420nm)
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage
- Excellent uniformity of gain
- 4-side tileable, with high fill factors
- 40μm cell pitch
- Highly transparent epoxy protection layer
- Operating temperature range from -20°C to +50°C
- RoHS, CFM, and REACH compliant
Applications
- X-ray and gamma-ray detection
- Nuclear medicine
- Positron emission tomography
- Safety and security
- Physics experiments
- Cherenkov detection
Block Diagram
Reflow Soldering Diagram
Opublikowano: 2023-05-10
| Zaktualizowano: 2023-05-12