Analog Devices Inc. ADRF5162 High Power Silicon SPDT Reflective Switch
Analog Devices Inc. ADRF5162 High Power Silicon Single-Pole Double-Throw (SPDT) Reflective Switch is a reflective switch manufactured in the silicon process. The ADRF5162 operates from 0.4GHz to 8GHz with a typical insertion loss of 0.6dB and a typical isolation of 45dB. The device offers a radio frequency (RF) input power handling capability of 45.5dBm average power and 50dBm peak power for the insertion loss path.
The Analog Devices ADRF5162 draws a low current of 130μA on the positive supply of +3.3V and 500μA on the negative supply of -3.3V. The device employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor-to-transistor logic (LVTTL)-compatible controls. The ADRF5162 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.
The ADRF5162 comes in a 24-lead, 4.0mm × 4.0mm, RoHS-compliant, lead frame chip scale package (LFCSP) package and operates from -40°C to +105°C.
Features
- 0.4GHz to 8GHz frequency range
- Low 0.6dB typical insertion loss to 4GHz
- High 45dB typical isolation to 4GHz
- High input linearity
- 0.1dB power compression (P0.1dB): 50dBm
- >76dBm third-order intercept (IP3)
- 1.2μs/0.1dB RF settling time with PIN ≤43dBm
- No low-frequency spurious
- Positive control CMOS/LVTTL-compatible interface
- -40°C to +105°C operating temperature range
- High power handling at TCASE = +85°C
- Insertion loss path
- 45.5dBm average
- 48.5dBm pulsed (>100ns pulse width, 15% duty cycle)
- 50dBm peak (≤100ns peak duration, 5% duty cycle)
- 43dBm hot-switching at RFC
- Insertion loss path
- 24-lead, 4.0mm × 4.0mm LFCSP package
- RoHS compliant
Applications
- Military radios, radars, and electronic counter measures
- Cellular infrastructures
- Test and instrumentation
- GaN and PIN diode replacement
Functional Block Diagram
Opublikowano: 2024-08-30
| Zaktualizowano: 2025-01-28