Alliance Memory Low Power CMOS SRAM
Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.Features
- 64kbit to 64Mbit memory size range
- Fabricated using high-performance, high-reliability CMOS technology
- 3.6V or 5.5V supply voltage
- SMT or through-hole types
- Variety of packages/cases
Applications
- Low power
- Battery backup non-volatile memory
View Results ( 33 ) Page
| Numer części | Karta charakterystyki | Organizacja | Wielkość pamięci |
|---|---|---|---|
| AS6C62256-55STIN | ![]() |
32 k x 8 | 256 kbit |
| AS6C62256-55STCN | ![]() |
32 k x 8 | 256 kbit |
| AS6C6264-55STCN | ![]() |
8 k x 8 | 64 kbit |
| AS6C1616C-45TINTR | ![]() |
1 M x 16 | 16 Mbit |
| AS6C6416-55TIN | ![]() |
4 M x 16 | 64 Mbit |
| AS6C4008-55PCN | ![]() |
512 k x 8 | 4 Mbit |
| AS6C4008-55PIN | ![]() |
512 k x 8 | 4 Mbit |
| AS6C6264-55PCN | ![]() |
8 k x 8 | 64 kbit |
| AS6C6264-55PIN | ![]() |
8 k x 8 | 64 kbit |
| AS6C6416-55BIN | ![]() |
4 M x 16 | 64 Mbit |
Opublikowano: 2012-11-30
| Zaktualizowano: 2024-03-14

