EPCOS / TDK CeraLink Capacitors

TDK CeraLink Capacitors feature patented antiferroelectric capacitor technology based on a material that offers increasing capacitance with increasing voltage. This technology makes these capacitors ideal for snubber applications. The devices feature low ESL and ESR properties while supporting higher switching frequencies and more robust semiconductors (high-speed IGBTs vs. MOSFETs). TDK CeraLink Capacitors deliver an ideal cost-effective ratio due to lower manufacturing complexity, high switching frequencies, and chip areas typically smaller than super junction MOSFETs. The cost of this type of solution is lower than a MOSFET solution. When used for system integration only, the capacitors lower the risk that semiconductors are damaged by peak overvoltages caused by the system approach. The snubber feature keeps the semiconductors in a safe operating area.

CeraLink Portfolio

EPCOS CeraLink Capacitors are a highly compact solution for the snubber and DC links of fast-switching converters based on SiC and GaN semiconductors. These devices are based on the ceramic material lead lanthanum zirconate titanate (PLZT). In contrast to conventional ceramic capacitors, the CeraLink products offer a maximum capacitance at the application voltage, and this also increases proportionately to the share of the ripple voltage.

Four CeraLink designs are available. The low-profile (LP) series features a capacitance range of 0.25µF up to 1µF and rated voltages between 500V_DC and 900V_DC. The solder-pin (SP) version offers a capacitance range of 5µF to 20µF and rated voltages between 500V_DC and 900V_DC. The flex-assembly (FA) devices provide a capacitance range of 0.25µF to 10µF and rated voltages between 500V_DC and 900V_DC. The surface-mount (SMD) devices have a 0.25uF capacitance rating and 500V_DC voltage rating.

Features

High capacitance density
Extremely low ESR and low ESL
ESR decreases drastically with temperature
High current density, effective ripple voltage reduction capability
Increasing effective capacitance with rising voltage
Capable for high-temperature excursions
Low losses at high frequencies
Supports fast-switching semiconductors
Supports further miniaturization of power electronics on the system level
Suitable for switching frequencies up to and above 1MHz

Cu inner electrode material properties are beneficial for high-frequency switching with low losses and fast slew rates with a high Imax
Ultra-low leakage currents due to material selection
With increasing frequencies, the dielectric losses are decreasing
Terminals for solder and for modern fast press-fit technology
Increasing capacitance with DC bias up to operating voltage
Compact housing with options for typical power modules for industrial and automotive applications
Special types for integration into power modules (IGBT/MOSFET/SiC)

Specifications

>1GΩ insulation resistance, resulting in low leakage current, especially at high temperatures
Extremely low <3.5nH ESL
-40°C to +125°C operating temperature range (for short periods up to +150°C), also suitable for SiC and GaN