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Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

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Pd - Power Dissipation

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (PLN) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Technology	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Packaging
	MOSFETs HIGH POWER_NEW IPW65R029CFD7XKSA1 Infineon Technologies 1: 45,06 zł 126In Stock	Mfr. Part No. IPW65R029CFD7XKSA1 Mouser Part No 726-IPW65R029CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	126In Stock	45,06 zł 30,71 zł 29,92 zł	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R060CFD7XKSA1 Infineon Technologies 1: 34,72 zł 268In Stock NRND	Mfr. Part No. IPW65R060CFD7XKSA1 Mouser Part No 726-IPW65R060CFD7SA1 NRND	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	268In Stock	34,72 zł 20,46 zł 17,25 zł 16,72 zł 16,24 zł	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	3.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R041CFD7XKSA1 Infineon Technologies 1: 37,44 zł 300In Stock	Mfr. Part No. IPP65R041CFD7XKSA1 Mouser Part No 726-IPP65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	300In Stock	37,44 zł 23,10 zł 20,02 zł 17,95 zł	Min.: 1 Mult.: 1			Si	Through Hole		N-Channel	1 Channel	650 V	50 A	41 mOhms	20 V	4.5 V	102 nC	- 55 C	+ 150 C	227 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R041CFD7XKSA1 Infineon Technologies 1: 41,36 zł 287In Stock 720On Order	Mfr. Part No. IPW65R041CFD7XKSA1 Mouser Part No 726-IPW65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	287In Stock 720On Order	41,36 zł 22,53 zł 20,86 zł 20,72 zł	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	68.5 A	41 mOhms	20 V	4 V	102 nC	- 55 C	+ 150 C	500 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPZA65R029CFD7XKSA1 Infineon Technologies 1: 56,98 zł 181In Stock	Mfr. Part No. IPZA65R029CFD7XKSA1 Mouser Part No 726-IPZA65R029CFD7XK	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	181In Stock	56,98 zł 32,08 zł 31,50 zł	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-4	N-Channel	1 Channel	650 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R060CFD7XKSA1 Infineon Technologies 1: 30,67 zł 71In Stock 500Expected 12/10/2026	Mfr. Part No. IPP65R060CFD7XKSA1 Mouser Part No 726-IPP65R060CFD7SA1	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	71In Stock 500Expected 12/10/2026	30,67 zł 16,59 zł 15,22 zł 13,95 zł	Min.: 1 Mult.: 1			Si	Through Hole	TO-220-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	4.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube