CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Results: 12
Select Image Part # Mfr. Description Datasheet Availability Pricing (PLN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Technology
Infineon Technologies GaN FETs HV GAN DISCRETES 5 018In Stock
3 600Expected 11/12/2026
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48,14 zł
27,28 zł
26,88 zł
26,62 zł
22,84 zł
Reel
22,84 zł
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 67 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 219 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 511In Stock
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14,74 zł
9,68 zł
6,78 zł
5,54 zł
5,32 zł
Reel
4,71 zł
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 815In Stock
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10,87 zł
7,04 zł
4,84 zł
3,90 zł
Reel
3,09 zł
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 4 699In Stock
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9,46 zł
6,07 zł
4,16 zł
3,31 zł
Reel
2,58 zł
Min.: 1
Mult.: 1
: 5 000
SMD/SMT HEMT 1 Channel 650 V 7.2 A 330 mOhms - 10 V 1.6 V 1.4 nC - 55 C + 150 C 28 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 601In Stock
1 800Expected 2/4/2027
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41,67 zł
23,85 zł
22,62 zł
21,34 zł
18,48 zł
Reel
18,30 zł
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 812In Stock
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32,43 zł
17,64 zł
16,19 zł
15,93 zł
13,90 zł
Reel
13,51 zł
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 38 A 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 125 W GaN
Infineon Technologies GaN FETs HV GAN DISCRETES Lead-Time 26 Weeks
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27,19 zł
16,10 zł
13,90 zł
12,76 zł
10,96 zł
Reel
10,96 zł
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 1 218In Stock
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17,86 zł
11,79 zł
8,36 zł
7,17 zł
Reel
6,07 zł
Min.: 1
Mult.: 1
: 1 800
SMD/SMT HEMT 1 Channel 650 V 15 A 140 mOhms - 10 V 1.6 V 3.4 nC - 40 C + 150 C Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 582In Stock
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50,42 zł
33,84 zł
31,33 zł
27,15 zł
Reel
23,67 zł
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 61 A 30 mOhms - 10 V 1.6 V 16 nC - 55 C + 150 C 181 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 457In Stock
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41,76 zł
23,23 zł
22,18 zł
18,83 zł
Reel
18,83 zł
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 42 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 132 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 2 028In Stock
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33,40 zł
18,22 zł
16,32 zł
Reel
14,43 zł
14,08 zł
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 54 mOhms - 10 V 1.6 V 8.4 nC - 55 C + 150 C 104 W Enhancement GaN
Infineon Technologies GaN FETs HV GAN DISCRETES 583In Stock
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27,90 zł
14,96 zł
13,68 zł
11,04 zł
Reel
11,04 zł
Min.: 1
Mult.: 1
: 800
SMD/SMT HEMT 1 Channel 650 V 66 mOhms - 10 V 1.6 V 6.6 nC - 55 C + 150 C 83 W Enhancement GaN