3rd Generation Silicon Carbide MOSFETs

Toshiba 3rd Generation Silicon Carbide MOSFETs are designed for high-power industrial applications like 400V AC input AC-DC power supplies. Other applications include photovoltaic (PV) inverters, and bi-directional DC-DC converters for uninterruptible power supplies (UPS). These MOSFETs contribute to reducing power consumption and improving power density. This is due to SiC technology which allows devices to deliver higher voltages, faster switching, and lower On-resistance. Toshiba’s third generation chip design offers enhanced reliability in addition to input capacitance (CISS) of 4850pF (typical), a low gate-input charge (Qg) of 128nC (typical), and a drain-to-source On-resistance (RDS(ON)) of just 15mΩ or 30mΩ (typical).

Results: 24
Select Image Part # Mfr. Description Datasheet Availability Pricing (PLN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 15mohm 132In Stock
65,16 zł
54,38 zł
37,49 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 100 A 15 mOhms - 10 V, + 25 V 5 V 128 nC + 175 C 342 W Enhancement
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2 500In Stock
Cut Tape
44,00 zł
32,60 zł
Reel
32,60 zł
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DFN-5 1 Channel 650 V 53 A 45 mOhms - 10 V, 25 V 5 V 65 nC + 175 C 156 W Enhancement
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.054 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2 480In Stock
Cut Tape
34,41 zł
23,63 zł
Reel
23,63 zł
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DFN-5 1 Channel 650 V 36 A 81 mOhms - 10 V, 25 V 5 V 41 nC + 175 C 132 W Enhancement
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2 493In Stock
Cut Tape
28,56 zł
19,32 zł
18,44 zł
Reel
18,44 zł
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DFN-5 1 Channel 650 V 27 A 136 mOhms - 10 V, 25 V 5 V 28 nC + 175 C 111 W Enhancement
Toshiba SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen. 2 500In Stock
Cut Tape
22,66 zł
13,55 zł
Reel
13,55 zł
Min.: 1
Mult.: 1
: 2 500
SMD/SMT DFN-5 1 Channel 650 V 18 A 183 mOhms - 10 V, 25 V 5 V 21 nC + 175 C 76 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm 61In Stock
34,85 zł
23,85 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 20 A 140 mOhms - 10 V, + 25 V 5 V 24 nC + 175 C 107 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm 6In Stock
30Expected 12/4/2026
42,81 zł
31,50 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 40 A 45 mOhms - 10 V, + 25 V 5 V 57 nC + 175 C 182 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 15mohm 28In Stock
122,50 zł
88,84 zł
68,77 zł
67,54 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 100 A 182 mOhms - 10 V, + 25 V 5 V 158 nC - 55 C + 175 C 431 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm 67In Stock
47,83 zł
27,37 zł
25,34 zł
23,67 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 40 mOhms - 10 V, + 25 V 5 V 82 nC - 55 C + 175 C 249 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 30mohm 17In Stock
30Expected 4/22/2027
45,76 zł
34,32 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 60 A 30 mOhms - 10 V, + 25 V 5 V 82 nC + 175 C 249 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 45mohm 92In Stock
51,39 zł
31,50 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 40 A 182 mOhms - 10 V, + 25 V 5 V 57 nC - 55 C + 175 C 182 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm 32In Stock
60Expected 4/21/2027
30,40 zł
20,02 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 40 A 48 mOhms - 10 V, + 25 V 5 V 41 nC + 175 C 132 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm 189In Stock
39,82 zł
31,24 zł
28,60 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 36 A 182 mOhms - 10 V, + 25 V 5 V 46 nC - 55 C + 175 C 170 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm 23In Stock
39,82 zł
30,10 zł
28,60 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 36 A 60 mOhms - 10 V, + 25 V 5 V 46 nC + 175 C 170 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm 15In Stock
29,22 zł
17,12 zł
13,82 zł
12,67 zł
12,01 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 20 A 145 mOhms - 10 V, + 25 V 5 V 21 nC - 55 C + 175 C 76 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm 25In Stock
27,63 zł
17,64 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 30 A 83 mOhms - 10 V, + 25 V 5 V 28 nC + 175 C 111 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm 19In Stock
28,38 zł
14,78 zł
14,12 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 20 A 113 mOhms - 10 V, + 25 V 5 V 28 nC - 55 C + 175 C 111 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm 40In Stock
23,36 zł
15,88 zł
14,12 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 20 A 107 mOhms - 10 V, + 25 V 5 V 21 nC + 175 C 76 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm
57Expected 4/22/2027
65,16 zł
54,38 zł
37,49 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 100 A 21 mOhms - 10 V, + 25 V 5 V 128 nC - 55 C + 175 C 342 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm
51Expected 11/2/2026
75,20 zł
64,46 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 100 A 15 mOhms - 10 V, + 25 V 5 V 158 nC + 175 C 431 W Enhancement
Toshiba SiC MOSFETs G3 1200V SiC-MOSFET TO-247 140mohm
210Expected 12/25/2026
34,63 zł
18,52 zł
17,07 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 20 A 182 mOhms - 10 V, + 25 V 5 V 24 nC - 55 C + 175 C 107 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 27mohm Non-Stocked Lead-Time 24 Weeks
39,07 zł
30,62 zł
26,80 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 58 A 37 mOhms - 10 V, + 25 V 5 V 65 nC - 55 C + 175 C 156 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 27mohm Non-Stocked Lead-Time 24 Weeks
39,03 zł
27,59 zł
22,97 zł
20,46 zł
19,14 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 58 A 27 mOhms - 10 V, + 25 V 5 V 65 nC + 175 C 156 W Enhancement
Toshiba SiC MOSFETs G3 650V SiC-MOSFET TO-247 48mohm Non-Stocked Lead-Time 24 Weeks
30,40 zł
21,43 zł
17,34 zł
15,40 zł
13,64 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 40 A 65 mOhms - 10 V, + 25 V 5 V 41 nC - 55 C + 175 C 132 W Enhancement