600V & 1200V TRENCHSTOP IGBTs

Infineon 600V & 1200V TRENCHSTOP™ IGBTs combine a trench top-cell and field-stop concept, leading to significantly improved static and dynamic performance. A combination of IGBTs with a soft-recovery Emitter Controlled-Diode further minimises turn-on losses. A compromise between switching and conduction losses allows for high efficiency.
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Results: 3
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 Mfr.
Description Datasheet Availability Pricing (PLN) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Infineon Technologies IGBTs INDUSTRY
Datasheet
1 200Expected 5/27/2027
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 53 A 200 W - 40 C + 175 C Trenchstop Performance Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
480Expected 11/26/2026
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 80 A 319.2 W - 40 C + 175 C Trenchstop IGBT3 Tube
Infineon Technologies IGBTs INDUSTRY
Datasheet
Lead-Time 36 Weeks
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 600 V 1.6 V - 20 V, 20 V 67 A 246 W - 40 C + 175 C Trenchstop Performance Tube