650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.

Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (PLN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Packaging
Toshiba MOSFETs MOSFET 650V 125mOhms DTMOS-VI 7 157In Stock
Cut Tape
23,14 zł
12,19 zł
11,22 zł
Reel
11,22 zł
Min.: 1
Mult.: 1
: 2 500
Si SMD/SMT DFN-8 N-Channel 1 Channel 650 V 24 A 125 mOhms 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFETs MOSFET 650V 170mOhms DTMOS-VI 4 670In Stock
Cut Tape
18,83 zł
9,72 zł
8,84 zł
7,70 zł
Reel
7,26 zł
Min.: 1
Mult.: 1
: 2 500
Si SMD/SMT DFN-8 N-Channel 1 Channel 650 V 18 A 170 mOhms 30 V 4 V 29 nC - 55 C + 150 C 150 W Enhancement Reel, Cut Tape, MouseReel
Toshiba MOSFETs MOSFET 650V 155mOhms DTMOS-VI 76In Stock
22,04 zł
14,43 zł
10,65 zł
9,42 zł
8,36 zł
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 155 mOhms 30 V 4 V 23 nC - 55 C + 150 C 40 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 190mOhms DTMOS-VI 96In Stock
20,24 zł
13,24 zł
9,86 zł
8,27 zł
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 15 A 190 mOhms 30 V 4 V 25 nC - 55 C + 150 C 40 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 110mOhms DTMOS-VI
59Expected 12/25/2026
25,52 zł
15,84 zł
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 110 mOhms 30 V 4 V 40 nC - 55 C + 150 C 190 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 110mOhms DTMOS-VI Non-Stocked Lead-Time 16 Weeks
27,19 zł
14,87 zł
13,60 zł
11,40 zł
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 24 A 110 mOhms 30 V 4 V 40 nC - 55 C + 150 C 45 W Enhancement Tube
Toshiba MOSFETs MOSFET 650V 210mOhms DTMOS-VI Non-Stocked Lead-Time 16 Weeks
Reel
6,25 zł
Min.: 2 500
Mult.: 2 500
: 2 500
Si SMD/SMT DFN-8 N-Channel 1 Channel 650 V 15 A 210 mOhms 30 V 4 V 25 nC - 55 C + 150 C 130 W Enhancement Reel