Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (PLN) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 309In Stock
34,63 zł
21,03 zł
20,68 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 650 V 39 A 64 mOhms - 5 V, + 23 V 5.7 V 33 nC - 55 C + 150 C 125 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SIC_DISCRETE 724In Stock
83,12 zł
60,94 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET 1 731In Stock
54,43 zł
33,84 zł
32,82 zł
32,43 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 650 V 47 A 34 mOhms - 5 V, + 23 V 5.7 V 62 nC - 55 C + 150 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package 14In Stock
25 000On Order
Cut Tape
20,20 zł
10,69 zł
9,77 zł
8,49 zł
Reel
7,92 zł
Min.: 1
Mult.: 1
: 1 000
SMD/SMT TO-263-7 1 Channel 1.7 kV 5.2 A 1 Ohms - 10 V, + 20 V 4.5 V 5 nC - 55 C + 175 C 68 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package 18In Stock
720On Order
30,58 zł
16,15 zł
14,56 zł
13,90 zł
Min.: 1
Mult.: 1
Through Hole TO-247-3 1 Channel 1.2 kV 19 A 182 mOhms - 7 V, + 23 V 3.5 V 13 nC - 55 C + 175 C 94 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
2 160On Order
61,20 zł
38,72 zł
36,65 zł
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 56 A 40 mOhms - 7 V, + 23 V 5.7 V 63 nC - 55 C + 150 C 227 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET Non-Stocked Lead-Time 53 Weeks
16,15 zł
16,10 zł
Min.: 240
Mult.: 240
Through Hole TO-247-4 1 Channel 650 V 28 A 94 mOhms - 5 V, + 23 V 5.7 V 22 nC - 55 C + 150 C 96 W Enhancement CoolSiC