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IXYS Tranzystory mocy MOSFET X4-Class
02.02.2026
02.02.2026
Offer low on-state resistance and conduction losses, with improved efficiency.
IXYS Tranzystor mocy MOSFET MMIX1T500N20X4 X4-Class 200 V
10.08.2025
10.08.2025
Ceramic-based isolated package improves overall Rth(j-s) and power handling capability.
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs
09.19.2025
09.19.2025
These devices have a high blocking voltage with low on-state resistance [RDS(ON)].
IXYS IXSJxN120R1K 1200V SiC Power MOSFETs
08.27.2025
08.27.2025
Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).
IXYS Tranzystor mocy MOSFET IXFP34N65X2W
03.17.2025
03.17.2025
650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS Tranzystor MOSFET SiC IXSA40N120L2-7
03.06.2025
03.06.2025
Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.
IXYS IXSA80N120L2-7 MOSFET SiC
03.06.2025
03.06.2025
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
IXYS Tranzystor mocy MOSFET IXFH34N65X2W
02.27.2025
02.27.2025
650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS Tranzystor mocy MOSFET IXFH46N65X2W
02.27.2025
02.27.2025
650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.
IXYS Tranzystor MOSFET SiC IXSH40N120L2KHV
02.18.2025
02.18.2025
1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS Tranzystor MOSFET SiC IXSH80N120L2KHV
02.18.2025
02.18.2025
1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS IXTNx00N20X4 miniBLOC MOSFETs
11.28.2024
11.28.2024
Offers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.
IXYS Tranzystory IGBT Gen5 XPT
07.25.2024
07.25.2024
Offers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.
Przeglądanie: 1 - 13 z 13
onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04.14.2026
04.14.2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04.10.2026
04.10.2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04.07.2026
04.07.2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
onsemi NTMFD0D9N02P1E MOSFET
04.06.2026
04.06.2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Vishay Moduł mocy MOSFET VS-HOT200C080 200 A 80 V
04.02.2026
04.02.2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
Toshiba N-Channel/P-Channel Power MOSFETs
03.31.2026
03.31.2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
STMicroelectronics STL059N4S8AG Power MOSFET
03.31.2026
03.31.2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03.27.2026
03.27.2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03.27.2026
03.27.2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03.24.2026
03.24.2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03.20.2026
03.20.2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03.17.2026
03.17.2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
Infineon Technologies OptiMOS™ 8 Power MOSFETs
03.17.2026
03.17.2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches
03.17.2026
03.17.2026
These devices are a great fit for serving as battery disconnect switches in various applications.
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03.13.2026
03.13.2026
Designed for compact and efficient designs, including high thermal performance.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03.10.2026
03.10.2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Qorvo QPD2560L 300W GaN/SiC HEMT
03.09.2026
03.09.2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03.06.2026
03.06.2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs
03.05.2026
03.05.2026
80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03.05.2026
03.05.2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
Przeglądanie: 1 - 25 z 643