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Najnowsze Elementy dyskretne półprzewodnikowe

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SemiQ Moduły zasilania MOSFET SiC 1200–V GEN3

08.11.2025

- With an isolated backplate, based on third-generation SiC technology, and tested at over 1400V.

SemiQ Dyskretne urządzenia MOSFET SiC 1200 V GEN3

01.02.2025

- Developed to increase performance and cut switching losses in high-voltage applications.

SemiQ Dioda Schottky'ego GP3D050B170B QBE™ 1700 V SiC

08.26.2024

- Umieszczona w obudowie TO-247-2L, zaprojektowanej pod kątem wymogów dotyczących rozmiaru i mocy w wielu zastosowaniach.

SemiQ Pełnomostkowe moduły MOSFET SiC 1200 V

03.21.2024

- Idealne do falowników fotowoltaicznych, systemów magazynowania energii i wysokonapięciowych przetwornic DC/DC.

SemiQ Półmostkowe moduły MOSFET SiC 1200 V

03.21.2024

- Niskie straty przełączania, niska rezystancja termiczna połączenia z obudową oraz bardzo duża wytrzymałość i łatwy montaż.

SemiQ GP2T020A120H 1200V SiC MOSFET

11.15.2023

- Offers reduced switching losses, higher efficiency, and increased power density.

SemiQ GCMX040B120S1-E1 1200V SiC MOSFET Power Module

03.09.2023

- The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.

SemiQ GCMS040B120S1-E1 1200V SiC COPACK Power Module

03.09.2023

- The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.

SemiQ GP2T080A120H 1200V SiC MOSFET

07.28.2022

- Features high-speed switching, a driver source pin for gate driving, and a reliable body diode.

Przeglądanie: 1 - 9 z 9

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Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode

02.19.2026

- Safeguards power interfaces, control lines, or low‑speed data lines within electronic systems.

Semtech TDS5311P SurgeSwitch™ 1-Line 53V EOS Protection IC

02.18.2026

- Provides high-energy EOS protection with superior temperature and clamping characteristics.

Vishay SE45124/SE50124 SMD High Voltage Rectifiers

02.17.2026

- These devices feature excellent heat dissipation and high surge current capability.

Vishay KBPE0480 Single In-Line Bridge Rectifier

02.16.2026

- These devices feature a low forward-voltage drop and are available in the KBP package.

Vishay SE050N6/SE080N6/SE100N6/SE120N6 SMD Rectifiers

02.10.2026

- These devices are available in a low-profile package with a typical height of only 0.88mm.

Littelfuse Tyrystor pojedynczy CMA160E1600HF

02.06.2026

- High‑performance 160A, 1600V device featuring a planar passivated chip structure in PLUS247 package.

TDK-Lambda i1R ORing MOSFET Modules

02.05.2026

- High-efficiency and low-loss power devices designed to replace traditional diodes.

Diotec Semiconductor BZX84B3V6 SMD Planar Zener Diode

02.03.2026

- Offers a sharp Zener voltage breakdown and a low leakage current.

Vishay SE30CLJ Surface-Mount High Voltage Rectifiers

02.03.2026

- Engineered for robust performance in demanding power conversion applications.

Vishay High Current Density/Voltage Schottky Rectifiers

02.03.2026

- Delivers robust performance for demanding power‑conversion applications.

Vishay Power Silicon Carbide Schottky Diodes

02.03.2026

- Delivers exceptional efficiency, ruggedness, and reliability in demanding power‑electronics apps.

Vishay SE40CLJ Surface-Mount High Voltage Rectifiers

02.03.2026

- Designed for demanding power conversion applications

IXYS Tranzystory mocy MOSFET X4-Class

02.02.2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

Qorvo QPD1014A GaN Input Matched Transistors

01.20.2026

- 15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

IXYS Diody wysokonapięciowe DP o szybkim odzyskiwaniu

01.20.2026

- 600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.

Qorvo QPD1004A GaN Input Matched Transistors

01.19.2026

- 25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.

Qorvo QPD1011A GaN Input Matched Transistors

01.19.2026

- 7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

Littelfuse Diody o wysokiej niezawodności SM15KPA-HRA i SM30KPA-HRA

01.13.2026

- Protects I/O interfaces, VCC bus, and other circuits in avionics, aviation, and eVTOL applications.

Littelfuse Diody TVS SP432x-01WTG

01.08.2026

- Provide ultra-low capacitance, bidirectional, and a high level of protection.

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

12.26.2025

- This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.

Infineon Technologies OptiMOS™ 6 80V Power MOSFETs

12.23.2025

- Sets industry benchmark performance with a wide portfolio offering.

Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs

12.19.2025

- Engineered to meet the stringent demands of electric vehicle (EV) applications.

onsemi NVMFD5877NL Dual N-Channel MOSFET

12.19.2025

- Designed for compact and efficient designs including high thermal performance.

onsemi NxT2023N065M3S EliteSiC MOSFETs

12.04.2025

- Feature low effective output capacitance and ultra-low gate charge.

STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor

12.04.2025

- E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.

Przeglądanie: 1 - 25 z 1214

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