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Producent = Diodes Incorporated Wróć do zakładki Produkty, aby zmodyfikować bieżące filtry.

Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFET

10.31.2025

- Integrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.

Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect Transistors

10.31.2025

- Offers fast switching performance with low gate charge and 60V maximum drain-source voltage.

Diodes Incorporated DMN1057UCA3 N-Channel Enhancement Mode MOSFET

10.21.2025

- Features superior switching performance, ideal for high-efficiency power-management applications.

Diodes Incorporated DXTP80x PNP Bipolar Transistors

09.18.2025

- PNP Bipolar Transistors offer a small form factor, thermally efficient PowerDI 3333-8 package.

Diodes Incorporated DXTN80x NPN Bipolar Transistors

09.17.2025

- Offers a small form factor, thermally efficient PowerDI 3333-8 package, for higher-density products.

Diodes Incorporated DXTN/P 78Q & 80Q Bipolar Transistors

07.24.2025

- Offers 30V, 60V, & 100V ratings, with exceptional conduction efficiency and thermal performance.

Diodes Incorporated DXTN69060C 60V NPN Ultra-Low VCE(SAT) Transistors

11.14.2024

- Features a proprietary structure for achieving ultra-low VCE(SAT) performance.

Diodes Incorporated DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

10.01.2024

- Provides low on-resistance in a thermally efficient small form factor package.

Diodes Incorporated DMN2992UFA 20V N-Ch Enhancement Mode MOSFET

08.01.2024

- 20V N-Ch MOSFET designed to minimize the RDS(ON), available in an X2-DFN0806-3 package.

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs

06.24.2024

- Designed to minimize the on-state resistance and maintain excellent switching performance.

Diodes Incorporated DMP3014SFDE 30V P-Ch Enhancement Mode MOSFETs

05.01.2024

- Offers low on-resistance & gate threshold voltage, while maintaining switching performance.

Diodes Incorporated BC53-16PAWQ 80V PNP Medium Power Transistor

05.01.2024

- Available in a compact DFN2020-3 package whose footprint is 50% smaller than an SOT-23 package.

Diodes Incorporated DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

04.01.2024

- Designed to minimize the on-state resistance [RDS(ON)] yet maintain superior switching performance.

Diodes Incorporated DMP68D1LV Dual P-Channel Enhancement Mode MOSFET

01.01.2024

- Offers low on-resistance and input capacitance, while maintaining superior switching performance.

Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

06.02.2023

- Designed to minimize the on-state resistance yet maintain superior switching performance.

Diodes Incorporated DMTH46M7SFVWQ N-Ch Enhancement Mode MOSFET

03.30.2023

- AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.

Diodes Incorporated MJD Automotive Medium Power Transistors

03.21.2023

- Devices are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.

Diodes Incorporated DMN52D0UV N-Channel Enhancement Mode MOSFET

03.06.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMN3732UFB4 N-Channel Enhancement Mode MOSFET

01.24.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMTH15H017LPSWQ N-Channel Enhancement Mode MOSFET

01.18.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMTH41M2SPSQ N-Channel Enhancement Mode MOSFET

01.17.2023

- AEC-Q101 qualified MOSFET with Low RDS(ON) that ensures minimum on-state losses.

Diodes Incorporated DMN52D0LT N-Channel Enhancement Mode MOSFET

01.04.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated DMN52D0UVA N-Channel Enhancement Mode MOSFET

01.04.2023

- Designed to minimize RDS(ON) and maintain impressive switching performance.

Diodes Incorporated FMMT411FDBWQ Low Voltage Avalanche Transistor

11.23.2022

- A silicon planar bipolar transistor designed for operating in avalanche mode.

Przeglądanie: 1 - 24 z 24

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Texas Instruments 2N7002L 6V N-channel MOSFETs

05.18.2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Infineon Technologies CIPOS™ Prime Automotive CoolSiC™ Power Modules

05.06.2026

- Power Modules are designed for high performance in xEV applications.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04.14.2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

ROHM Semiconductor High-Density SiC Power Modules

04.10.2026

- TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

04.07.2026

- Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.

onsemi NTMFD0D9N02P1E MOSFET

04.06.2026

- Dual N-channel MOSFET designed with low Rg for fast switching applications.

Vishay Moduł mocy MOSFET VS-HOT200C080 200 A 80 V

04.02.2026

- This device reduces board space requirements by up to 15% compared to standard discrete solutions.

Toshiba N-Channel/P-Channel Power MOSFETs

03.31.2026

- Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.

STMicroelectronics STL059N4S8AG Power MOSFET

03.31.2026

- A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.

Infineon Technologies OptiMOS™ 6 60V Power MOSFETs

03.27.2026

- Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.

Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs

03.27.2026

- Application-optimized performance, enabling peak performance for data centers, servers, & AI.

iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

03.24.2026

- Delivers ultra-low conduction and switching losses in a robust TO-220 package.

Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)

03.20.2026

- 650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.

Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches

03.17.2026

- These devices are a great fit for serving as battery disconnect switches in various applications.

ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules

03.17.2026

- Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.

Infineon Technologies OptiMOS™ 8 Power MOSFETs

03.17.2026

- These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

03.13.2026

- Designed for compact and efficient designs, including high thermal performance.

Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.

Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.

Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.

Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET

03.10.2026

- Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.

Qorvo QPD2560L 300W GaN/SiC HEMT

03.09.2026

- Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.

Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET

03.06.2026

- Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.

Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs

03.05.2026

- 80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.

EPC EPC2304 Enhancement-Mode GaN Power Transistor

03.05.2026

- Handles tasks where ultra-high switching frequency and low on-time are advantageous.

Przeglądanie: 1 - 25 z 577

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