Najnowsze Elementy dyskretne półprzewodnikowe

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Rodzaje elementów dyskretnych półprzewodnikowych

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IXYS Tranzystory mocy MOSFET X4-Class

02.02.2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

IXYS Diody wysokonapięciowe DP o szybkim odzyskiwaniu

01.20.2026

- 600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.

IXYS Tranzystor mocy MOSFET MMIX1T500N20X4 X4-Class 200 V

10.08.2025

- Ceramic-based isolated package improves overall Rth(j-s) and power handling capability.

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

09.19.2025

- These devices have a high blocking voltage with low on-state resistance [RDS(ON)].

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs

08.27.2025

- Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).

IXYS Prostowniki krzemowe serii Dx do zastosowań motoryzacyjnych

04.14.2025

- Features glass-passivated junctions, ensuring stable operation and high reliability.

IXYS Diody Schottky'ego DCK SiC

04.03.2025

- Features high-frequency operation and high surge current capability.

IXYS Moduł diody tyrystorowej MCMA140PD1800TB

03.25.2025

- 140A diode module, integrated with a planar passivated chip and offers long-term stability.

IXYS Tranzystor mocy MOSFET IXFP34N65X2W

03.17.2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS Tranzystor MOSFET SiC IXSA40N120L2-7

03.06.2025

- Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.

IXYS IXSA80N120L2-7 MOSFET SiC

03.06.2025

- Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.

IXYS Tranzystor mocy MOSFET IXFH34N65X2W

02.27.2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS Tranzystor mocy MOSFET IXFH46N65X2W

02.27.2025

- 650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS Tranzystor MOSFET SiC IXSH80N120L2KHV

02.18.2025

- 1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS Tranzystor MOSFET SiC IXSH40N120L2KHV

02.18.2025

- 1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS IXTNx00N20X4 miniBLOC MOSFETs

11.28.2024

- Offers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.

IXYS DPF100C1200HB 1200V, 2x 50A Fast Recovery Diodes

11.22.2024

- Two general-purpose power switching diodes in a common-cathode configuration and a TO-247 package.

IXYS Tranzystory IGBT Gen5 XPT

07.25.2024

- Offers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.

IXYS DPF30U200FC 200V 30A 3-Phase Bridge Rectifier

07.22.2024

- This device is commonly used as a rectifier in Switch Mode Power Supplies (SMPS).

IXYS DSEP60-06AZ 600V 60A Fast Recovery Diode

07.08.2024

- A high-performance, low-loss, soft-recovery single diode in a TO-268AA (D3PAK-HV) package.

IXYS SRU6008DS2RP Sensitive SCR

02.19.2024

- A 600V high forward blocking SCR, ideal for high voltage capacitor discharge applications.

IXYS MPA 95-06DA FRED Modules

01.18.2024

- Features planar passivated chips and low switching loss for high-frequency switching devices.

IXYS MCMA140P1600TA-NI Thyristor Modules

01.18.2024

- Features planar passivated chips and direct copper-bonded AI2O3-ceramic for line frequency.

IXYS DMA80I1600HA Single-Diode Rectifiers

08.11.2022

- Features planar passivated chips, low leakage current, and low forward voltage drop.

IXYS STS802U2SRP 1.5A Sensitive Dual SCRs

08.10.2022

- Offers a high static dv/dt with a low turn-off (tq) time and up to 20A surge capability.

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Texas Instruments 2N7002L 6V N-channel MOSFETs

05.18.2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Bourns CDSOT23-SM712-Q Surface Mount TVS Diode

05.12.2026

- Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.

Littelfuse Diody TVS FlatSuppressX™ TP1KSMB-FL

05.04.2026

- Designed specifically to protect sensitive electronic equipment from voltage transients.

Littelfuse Diody TVS FlatSuppressX™ TP5.0SMD-FL

05.04.2026

- 5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.

Littelfuse Diody TVS AK-FL

05.04.2026

- Axial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.

Littelfuse SJx08x High-Temperature SCRs

04.24.2026

- Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.

Littelfuse QVx35xHx High-Temperature Alternistor TRIACs

04.24.2026

- Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.

RECOM Power ICs, Transformers, & Discrete Solutions

04.24.2026

- Features components ideal for energy, industrial, and medical applications.

Diotec Semiconductor BAS70-05W Schottky Diode

04.16.2026

- Designed for high‑speed switching and voltage clamping in space‑constrained applications.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04.14.2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

ROHM Semiconductor High-Density SiC Power Modules

04.10.2026

- TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.

Vishay Prostowniki szybkiego odzyskiwania RS07x

04.07.2026

- Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

04.07.2026

- Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.

Vishay Standardowe prostowniki wysokiego napięcia S07x-M

04.07.2026

- Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.

onsemi NTMFD0D9N02P1E MOSFET

04.06.2026

- Dual N-channel MOSFET designed with low Rg for fast switching applications.

Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes

04.02.2026

- High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.

Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes

04.02.2026

- AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.

Vishay Moduł mocy MOSFET VS-HOT200C080 200 A 80 V

04.02.2026

- This device reduces board space requirements by up to 15% compared to standard discrete solutions.

Toshiba N-Channel/P-Channel Power MOSFETs

03.31.2026

- Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.

STMicroelectronics STL059N4S8AG Power MOSFET

03.31.2026

- A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.

Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs

03.27.2026

- Application-optimized performance, enabling peak performance for data centers, servers, & AI.

Infineon Technologies Multi-Purpose Diodes for ESD Protection

03.27.2026

- Offering the best protection in a small footprint, the diodes deliver superior ESD performance.

Infineon Technologies OptiMOS™ 6 60V Power MOSFETs

03.27.2026

- Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.

iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

03.24.2026

- Delivers ultra-low conduction and switching losses in a robust TO-220 package.

RECOM Power RVS002 Micropower Isolated Power Bridge Rectifiers

03.24.2026

- Compact and ideal for micro-power isolated power supply applications with limited space.

Przeglądanie: 1 - 25 z 1101

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