Najnowsze Elementy dyskretne półprzewodnikowe

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Rodzaje elementów dyskretnych półprzewodnikowych

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Producent = Nexperia Wróć do zakładki Produkty, aby zmodyfikować bieżące filtry.

Nexperia BUK7Q N-Channel MOSFET in MLPAK33-WF Package

09.29.2025

- Uses Trench 9 technology, meets AEC-Q101 requirements.

Nexperia BUK9Q N-Channel Trench MOSFET

09.09.2025

- Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.

Nexperia BUK6Q66-60PJ MOSFET

08.27.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q8R2-30PJ MOSFET

08.27.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia MJPEx Bipolar Junction Transistors (BJTs)

08.26.2025

- CFP15B package offers a compact & cost-efficient alternative to the MJD series in the DPAK package.

Nexperia BUK6Q12-40PJ MOSFET

08.19.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q26-40PJ MOSFET

08.19.2025

- P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia BUK6Q21-30PJ MOSFET

08.19.2025

- 30V, P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.

Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs

07.03.2025

- 40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).

Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs

07.03.2025

- Normally off e-mode devices that deliver superior performance and very low on-state resistance.

Nexperia PSC20120x Silicon Carbide (SiC) Schottky Diodes

06.02.2025

- Designed for ultra-high performance, low-loss, high-efficiency power conversion applications.

Nexperia ES3D Hyperfast Recovery Rectifier

05.07.2025

- 200V, 3A rectifier with high forward surge capability, encapsulated in an SOD1003-1 SMC package.

Nexperia ES1D Hyperfast Recovery Rectifier

05.07.2025

- 200V, 1A rectifier with high forward surge capability, encapsulated in an SOD1001-1 SMA package.

Nexperia ES2D Hyperfast Recovery Rectifier

05.07.2025

- 200V, 2A rectifier with high forward surge capability, encapsulated in an SOD1002-1 SMB package.

Nexperia ES1J Hyperfast Recovery Rectifier

05.02.2025

- 600V, 1A rectifier with high forward surge capability, encapsulated in an SOD1001-1 SMA package.

Nexperia ES1B Hyperfast Recovery Rectifier

05.02.2025

- 100V, 1A rectifier with high forward surge capability, encapsulated in an SOD1001-1 SMA package.

Nexperia MURS160B Ultrafast Recovery Rectifier

04.28.2025

- 600V, 1A rectifier with high forward surge capability, encapsulated in an SOD1002-1 SMB package.

Nexperia GS8M Recovery Rectifier

04.28.2025

- 1000V, 8A rectifier with high forward surge capability, encapsulated in an SOD1003-1 SMC package.

Nexperia GS5MB Recovery Rectifier

04.28.2025

- 1000V, 5A rectifier with high forward surge capability, encapsulated in an SOD1002-1 SMB package.

Nexperia GS1M Recovery Rectifier

04.28.2025

- 1000V, 1A rectifier with high forward surge capability, encapsulated in an SOD1001-1 SMA package.

Nexperia US1J Ultrafast Recovery Rectifier

04.28.2025

- 600V, 1A rectifier with high forward surge capability, encapsulated in an SOD1001-1 SMA package.

Nexperia US3M Ultrafast Recovery Rectifier

04.28.2025

- 1000V, 3A rectifier with high forward surge capability, encapsulated in an SOD1003-1 SMC package.

Nexperia FR2M Fast Recovery Rectifier

04.28.2025

- 1000V, 2A rectifier with high forward surge capability, encapsulated in an SOD1002-1 SMB package.

Nexperia GS10M Recovery Rectifier

04.28.2025

- 1000V, 10A rectifier with high forward surge capability, encapsulated in an SOD1003-1 SMC package.

Nexperia US1M Ultrafast Recovery Rectifier

04.28.2025

- 1000V, 1A rectifier with high forward surge capability, encapsulated in an SOD1001-1 SMA package.

Przeglądanie: 1 - 25 z 99

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onsemi GaNEXUS™ GaN FETs

07.08.2026

- Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.

Bourns Diody TVS CDDFN2 do montażu powierzchniowego

07.07.2026

- ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.

Semtech RCLAMP2891PQ TVS Diode

06.30.2026

- Ultra-low capacitance 1-line, 28V TVS diode, protects high‑speed signal lines from ESD and EOS.

Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode

06.29.2026

- Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.

Littelfuse Macierze diod TVS SPA

06.26.2026

- TVS diode arrays for ESD, EFT, and surge protection across data and power interfaces.

Bourns CDSOD323-T24LC-Q Automotive-Grade TVS Diodes

06.26.2026

- Bidirectional automotive-grade TVS diodes in a compact SOD-323 package.

Bourns CDSOD323-TxxSC-Q TVS Diodes

06.25.2026

- Offer a selection of voltage options from 3V to 36V in a bidirectional configuration.

Diodes Incorporated D3V3ZF1BD2CSP Bi-Directional TVS Diode

06.22.2026

- Low-capacitance device designed specifically to protect high-speed differential lines.

Vishay MXP075 MaxSiC® 750V N-Channel MOSFETs

06.19.2026

- Features a 750V drain-source voltage, a fast switching speed & a 3μs short-circuit withstand time.

Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs

06.18.2026

- Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.

Infineon Technologies EasyPACK™ S Modules

06.12.2026

- Efficient power conversion in a compact, easy-to-integrate package built for modern power designs.

Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETs

05.27.2026

- Advanced N‑channel devices engineered for high-efficiency power switching.

Texas Instruments 2N7002L 6V N-channel MOSFETs

05.18.2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Bourns CDSOT23-SM712-Q Surface-Mount TVS Diode

05.12.2026

- Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.

Infineon Technologies Moduły mocy CIPOS™ Prime Automotive CoolSiC™

05.06.2026

- Power Modules are designed for high performance in xEV applications.

Littelfuse Diody TVS FlatSuppressX™ TP1KSMB-FL

05.04.2026

- Designed specifically to protect sensitive electronic equipment from voltage transients.

Littelfuse Diody TVS FlatSuppressX™ TP5.0SMD-FL

05.04.2026

- 5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.

Littelfuse Diody TVS AK-FL

05.04.2026

- Axial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.

RECOM Power ICs, Transformers, & Discrete Solutions

04.24.2026

- Features components ideal for energy, industrial, and medical applications.

Littelfuse QVx35xHx High-Temperature Alternistor TRIACs

04.24.2026

- Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.

Littelfuse SJx08x High-Temperature SCRs

04.24.2026

- Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.

Diotec Semiconductor BAS70-05W Schottky Diode

04.16.2026

- Designed for high‑speed switching and voltage clamping in space‑constrained applications.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04.14.2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

ROHM Semiconductor High-Density SiC Power Modules

04.10.2026

- TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.

Vishay Prostowniki szybkiego odzyskiwania RS07x

04.07.2026

- Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.

Przeglądanie: 1 - 25 z 1094

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