LMG3100R0x GaN FETs with Integrated Drivers

Texas Instruments LMG3100R0x Gallium Nitride (GaN) FETs with Integrated Drivers are 1.7mΩ GaN FETs and drivers with a high-side level shifter and bootstrap. Two LGM3100 devices can be used to form a half-bridge with no external level shifter required. The GaN FET and driver components feature built-in supply rail under-voltage lock-out (UVLO) protection and internal bootstrap supply voltage clamping capability to prevent overdrive (>5.4V). Texas Instruments LMG3100R0x offers low power consumption and an improved user interface. The LMG3100R017 is an ideal solution for high-frequency, high-efficiency applications, including buck-boost converters, LLC converters, solar inverters, telecom, motor drives, power tools, and Class D audio amplifiers.