LMG342xR050 600V 50mΩ GaN FETs

Texas Instruments LMG342xR050 600V 50mΩ GaN FETs with integrated driver and protection enable designers to achieve new power density and efficiency levels in power electronics systems. The LMG342xR050 integrates a silicon driver that enables switching speeds up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance.