YQx0 Automotive-Grade Schottky Barrier Diodes

ROHM Semiconductor YQx0 Automotive-Grade Schottky Barrier Diodes provide low forward voltages, reverse currents, and capacitances with high reliability. The AEC-Q101 qualified YQx0 Schottky Barrier Diodes feature a Trench MOS structure with a +150°C junction temperature. Applications include automotive, switching power supplies, freewheeling diodes, and reverse polarity protection.

Wyniki: 5
Wybierz Obraz Nr części Produc. Opis Karta charakterystyki Dostępność Wycena (PLN) Filtruj wyniki w tabeli wg ceny jednostkowej zależnej od ilości. Il. RoHS Model ECAD Produkt Styl mocowania Opakowanie/obudowa Konfiguracja Technologia If – prąd przewodzenia diody Vrrm – powtarzajace się napięcie wsteczne Vf – Napięcie przewodzenia Ifsm – prąd udarowy przewodzenia Ir – Prąd wsteczny Maksymalna temperatura robocza Opakowanie
ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD for Automotive: The YQ10RSM10SDTF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable opera 7 578Na stanie magazynowym
Min.: 1
Wielokr.: 1
Szpula: 4 000

Schottky Diodes SMD/SMT TO-277A-3 Dual Anode Common Cathode Si 10 A 100 V 610 mV 200 A 80 uA + 175 C Reel, Cut Tape
ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10CDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1 900Na stanie magazynowym
Min.: 1
Wielokr.: 1
Szpula: 1 000

Schottky Diodes SMD/SMT TO-263L-3 Dual Anode Common Cathode Si 20 A 100 V 650 mV 150 A 70 uA + 150 C Reel, Cut Tape, MouseReel
ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD for Automotive: The YQ20NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 2 000Na stanie magazynowym
Min.: 1
Wielokr.: 1
Szpula: 1 000

Schottky Diodes SMD/SMT TO-263L-3 Single Si 20 A 100 V 790 mV 200 A 80 uA + 150 C Reel, Cut Tape
ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive: The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operati 400Na stanie magazynowym
Min.: 1
Wielokr.: 1
Szpula: 2 500

Schottky Diodes SMD/SMT TO-252-3 Single Si 20 A 100 V 790 mV 150 A 80 uA + 150 C Reel, Cut Tape
ROHM Semiconductor Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operat 1 280Na stanie magazynowym
Min.: 1
Wielokr.: 1
Szpula: 1 000

Schottky Diodes SMD/SMT TO-263L-3 Single Si 30 A 100 V 780 mV 200 A 150 uA + 150 C Reel, Cut Tape