IXGN50N120C3H1

IXYS
747-IXGN50N120C3H1
IXGN50N120C3H1

Produc.:

Opis:
IGBT Modules High Frequency Range >40khz CIGBT w/Diode

Model ECAD:
Pobierz bezpłatną aplikację Library Loader, aby skonwertować ten plik do narzędzia ECAD Tool. Dowiedz się więcej o modelu ECAD.

Dostępność

Stany magazynowe:
Niedostępne na stanie
Średni czas produkcji:
32 tygodni Oczekiwany czas produkcji w fabryce.
W przypadku tego produktu zgłoszono długi czas realizacji.
Minimum: 300   Wielokrotności: 10
Cena jednostkowa:
-,-- zł
wewn. Cena:
-,-- zł
Szac. taryfa:
Ten produkt jest wysyłany BEZPŁATNIE

Cennik (PLN)

Il. Cena jednostkowa
wewn. Cena
95,89 zł 28 767,00 zł

Atrybuty produktu Wartość atrybutu Wybierz atrybut
IXYS
Kategoria produktów: Moduły IGBT
RoHS:  
IGBT Modules
1.2 kV
95 A
100 nA
460 W
SOT-227B-4
- 55 C
+ 150 C
Tube
Marka: IXYS
Maksymalne napięcie bramka–emiter : 20 V
Styl mocowania: Screw Mount
Rodzaj produktu: IGBT Modules
Seria: IXGN50N120
Wielkość opakowania producenta: 10
Podkategoria: IGBTs
Technologia: Si
Nazwa handlowa: GenX3
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

GenX3™ Insulated-Gate Bipolar Transistors (IGBTs)

IXYS GenX3™ Insulated-Gate Bipolar Transistors (IGBTs) are PT (Punch Through) manufactured using a robust HDMOS IGBT process. The 600V GenX3 components are optimized for high-current applications requiring soft-switching frequencies upwards of 200kHz and hard-switching frequencies of 40kHz. The 600V IGBTs provide higher surge current capabilities, a lower saturation voltage, and lower energy losses offering designers a viable option for switching applications at the 600V range. The 1200V GenX3 IGBTs offer lower saturation voltages, lower switching losses, and higher surge current capabilities. The 1200V models are aimed at the high-voltage power conversion market.

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