FFSP1065B

onsemi
863-FFSP1065B
FFSP1065B

Mfr.:

Description:
SiC Schottky Diodes SIC DIODE 650V 10A

Datasheet:
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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220-2
Single
10 A
650 V
1.38 V
45 A
40 uA
- 55 C
+ 175 C
FFSP1065B
Tube
Brand: onsemi
Pd - Power Dissipation: 75 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 650 V
Unit Weight: 3,698 g
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

In Stock: 825

Stock:
825 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- zł
Ext. Price:
-,-- zł
Est. Tariff:

Pricing (PLN)

Qty. Unit Price
Ext. Price
15,25 zł 15,25 zł
7,77 zł 77,70 zł
6,51 zł 651,00 zł
5,75 zł 2 875,00 zł
5,00 zł 5 000,00 zł
4,96 zł 24 800,00 zł

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