STPSC6H065BY-TR

STMicroelectronics
511-STPSC6H065BY-TR
STPSC6H065BY-TR

Produc.:

Opis:
SiC Schottky Diodes Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode

Model ECAD:
Pobierz bezpłatną aplikację Library Loader, aby skonwertować ten plik do narzędzia ECAD Tool. Dowiedz się więcej o modelu ECAD.

Na stanie magazynowym: 3 354

Stany magazynowe:
3 354 Wysylamy natychmiast
Średni czas produkcji:
19 tygodni Oczekiwany czas produkcji w fabryce dotyczący ilości większych niż pokazane.
Minimum: 1   Wielokrotności: 1
Cena jednostkowa:
-,-- zł
wewn. Cena:
-,-- zł
Szac. taryfa:

Cennik (PLN)

Il. Cena jednostkowa
wewn. Cena
6,28 zł 6,28 zł
5,29 zł 52,90 zł
4,43 zł 443,00 zł
4,21 zł 2 105,00 zł
4,07 zł 4 070,00 zł
Komplet Opakowanie zbiorcze (zamówienie w wielokrotności 2500)
4,07 zł 10 175,00 zł

Atrybuty produktu Wartość atrybutu Wybierz atrybut
STMicroelectronics
Kategoria produktów: Diody SCHOTTKY SIC
RoHS:  
SMD/SMT
DPAK
Single
6 A
650 V
1.45 V
60 A
5 uA
- 40 C
+ 175 C
STPSC
AEC-Q101
Reel
Cut Tape
Marka: STMicroelectronics
Kraj montażu: Not Available
Kraj wytworzenia: Not Available
Kraj pochodzenia: CN
Rodzaj produktu: SiC Schottky Diodes
Wielkość opakowania producenta: 2500
Podkategoria: Diodes & Rectifiers
Vr – napięcie wsteczne: 650 V
Jednostka masy: 320 mg
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Wybrane atrybuty: 0

CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.